Show simple item record

dc.contributor.authorZhang, Xiaohongen_US
dc.contributor.authorTiwari, Shree Prakashen_US
dc.contributor.authorKim, Sung-Jinen_US
dc.contributor.authorKippelen, Bernarden_US
dc.date.accessioned2013-05-06T20:21:13Z
dc.date.available2013-05-06T20:21:13Z
dc.date.issued2009-12
dc.identifier.citationZhang, Xiao-Hong and Tiwari, Shree Prakash and Kim, Sung-Jin and Kippelen, Bernard, "Low-voltage pentacene organic field-effect transistors with high-kappa HfO2 gate dielectrics and high stability under bias stress," Applied Physics Letters, 95, 22, (November 30 2009)en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/46880
dc.description© 2009 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3269577en_US
dc.descriptionDOI: 10.1063/1.3269577en_US
dc.description.abstractLow-voltage pentacene organic field-effect transistors are demonstrated (operating voltage of −3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C. A high hole mobility of 0.39 cm²/V s with low threshold voltage (<−0.5 V) and low subthreshold slope of 120 mV/dec is achieved with a HfO₂ dielectric layer modified with a phosphonic acid based treatment. A high value of 94.8 nF/V s is obtained for the product of mobility and capacitance density. The devices show excellent bias stress stability with or without the phosphonic acid at the HfO₂ gate dielectric surface.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectAtomic layer depositionen_US
dc.subjectHole mobilityen_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectOrganic semiconductorsen_US
dc.titleLow-voltage pentacene organic field-effect transistors with high-kappa HfO₂ gate dielectrics and high stability under bias stressen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.3269577


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record