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dc.contributor.authorCox, Noah Walteren_US
dc.date.accessioned2013-05-23T11:31:16Z
dc.date.available2013-05-23T11:31:16Z
dc.date.issued1981en_US
dc.identifier.other183127en_US
dc.identifier.urihttp://hdl.handle.net/1853/47032
dc.descriptionIssued as Quarterly progress reports no. 1-4, and Final report, Project no. A-2951en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.relation.ispartofseriesEngineering Experiment Station ; Project no. A-2951en_US
dc.subject.lcshSemiconductorsen_US
dc.subject.lcshIntegrated circuitsen_US
dc.subject.lcshEpitaxyen_US
dc.titleBinary, ternary, quaternary heterojunctions of III-V semiconductors grown by molecular beam epitaxyen_US
dc.typeTechnical Reporten_US
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Engineering Experiment Stationen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programs


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