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dc.contributor.authorWang, X. J.en_US
dc.contributor.authorWang, L. P.en_US
dc.contributor.authorAdewuyi, O. S.en_US
dc.contributor.authorCola, Baratunde A.en_US
dc.contributor.authorZhang, Zhuominen_US
dc.date.accessioned2013-05-29T18:28:36Z
dc.date.available2013-05-29T18:28:36Z
dc.date.issued2010-10
dc.identifier.citationWang, X. J. and Wang, L. P. and Adewuyi, O. S. and Cola, B. A. and Zhang, Z. M., "Highly specular carbon nanotube absorbers," Applied Physics Letters, 97, 16 (October 18 2010)en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/47099
dc.description© 2010 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3502597en_US
dc.descriptionDOI: 10.1063/1.3502597en_US
dc.description.abstractSpecular black materials have important applications, such as in absolute cryogenic radiometers, space-borne spectroradiometers, and some energy conversion devices. While vertically aligned carbon nanotubes (VACNT) can have close-to-unity absorptance, so far the reported reflection has been essentially diffuse. This letter describes a highly specular black absorber made of VACNT. Both the bidirectional reflectance distribution function and specular reflectance were measured at the wavelength λ = 635 nm using a laser scatterometer. The ordinary and extraordinary optical constants were obtained by fitting the specular reflectance, calculated from modified reflectance formulae for light incident from air to a uniaxial medium, considering surface roughness. Furthermore, the absorptance at λ = 635 nm was shown to be 0.994±0.002, based on the measured directional-hemispherical reflectance.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectCarbon nanotubesen_US
dc.subjectDirect energy conversionen_US
dc.subjectOptical constantsen_US
dc.subjectRadiometryen_US
dc.subjectReflectivityen_US
dc.subjectSurface roughnessen_US
dc.subjectVisible spectraen_US
dc.titleHighly specular carbon nanotube absorbersen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Mechanical Engineeringen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.3502597


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