Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer
Kim, Felix Sunjoo
Jenekhe, Samson A.
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Insertion of a low-k polymer dielectric layer between the SiO₂ gate dielectric and poly(benzobisimidazobenzophenanthroline) (BBL) semiconductor of n-channel transistors is found to increase the field-effect mobility of electrons from 3.6 × 10⁻⁴ cm²/Vs to as high as 0.028 cm²/Vs. The enhanced carrier mobility was accompanied by improved multicycling stability and durability in ambient air. Studies of a series of eight polymer dielectrics showed that the electron mobility increased exponentially with decreasing dielectric constant, which can be explained to result from the reduced energetic expense of charge-carrier/dipole interaction.
- COPE Publications