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dc.contributor.authorKim, Felix Sunjooen_US
dc.contributor.authorHwang, Do-Kyungen_US
dc.contributor.authorKippelen, Bernarden_US
dc.contributor.authorJenekhe, Samson A.en_US
dc.date.accessioned2013-05-29T18:28:38Z
dc.date.available2013-05-29T18:28:38Z
dc.date.issued2011-10
dc.identifier.citationKim, Felix Sunjoo and Hwang, Do-Kyung and Kippelen, Bernard and Jenekhe, Samson A., "Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer," Applied Physics Letters, 99, 17 (October 24 2011)en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/47109
dc.description© 2011 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3655680en_US
dc.descriptionDOI: 10.1063/1.3655680en_US
dc.description.abstractInsertion of a low-k polymer dielectric layer between the SiO₂ gate dielectric and poly(benzobisimidazobenzophenanthroline) (BBL) semiconductor of n-channel transistors is found to increase the field-effect mobility of electrons from 3.6 × 10⁻⁴ cm²/Vs to as high as 0.028 cm²/Vs. The enhanced carrier mobility was accompanied by improved multicycling stability and durability in ambient air. Studies of a series of eight polymer dielectrics showed that the electron mobility increased exponentially with decreasing dielectric constant, which can be explained to result from the reduced energetic expense of charge-carrier/dipole interaction.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectCarrier mobilityen_US
dc.subjectLow-k dielectric thin filmsen_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectPolymer filmsen_US
dc.subjectSilicon compoundsen_US
dc.subjectThin film transistorsen_US
dc.titleEnhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layeren_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameUniversity of Washington. Dept. of Chemical Engineeringen_US
dc.contributor.corporatenameUniversity of Washington. Dept. of Chemistryen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.3655680


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