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dc.contributor.authorDegnan, Brian Paulen_US
dc.date.accessioned2013-06-15T02:38:01Z
dc.date.available2013-06-15T02:38:01Z
dc.date.issued2013-01-18en_US
dc.identifier.urihttp://hdl.handle.net/1853/47548
dc.description.abstractThe subthreshold region of operation has simple physics which allows for a balanced-force approach to behavioral modeling that has shown to be robust to temperature, and a model that encapsulates MOSFET behavior across all operational regions has been developed. The subthreshold region of operation also allows for injection of charge onto floating nodes that allows for persistent storage that can be used in a variety of applications. The combination of charge storage and device modeling has allowed for the development of programmable circuits for digital applications.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectFloating-gate transistorsen_US
dc.subjectCompact EKVen_US
dc.subjectSubthresholden_US
dc.subject.lcshTransistors
dc.subject.lcshIntegrated circuits
dc.subject.lcshMicroelectronics
dc.titleTemperature robust programmable subthreshold circuits through a balanced force approachen_US
dc.typeDissertationen_US
dc.description.degreePhDen_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.advisorCommittee Chair: Jennifer Hasler; Committee Member: Bradley Minch; Committee Member: David Anderson; Committee Member: Maysam Ghovanloo; Committee Member: Saibal Mukhopadhyayen_US


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