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dc.contributor.authorShen, Shyh-Chiangen_US
dc.contributor.authorDupuis, Russell D.en_US
dc.contributor.authorRyou, Jae-Hyunen_US
dc.date.accessioned2013-06-20T14:16:55Z
dc.date.available2013-06-20T14:16:55Z
dc.date.issued2011-03-01en_US
dc.identifier.other10835en_US
dc.identifier.urihttp://hdl.handle.net/1853/47869
dc.descriptionIssued as final reporten_US
dc.description.sponsorshipIntersil, Inc.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.relation.ispartofseriesGeorgia Electronic Design Center ; Project no. 113893en_US
dc.titleE-mode III-n high-voltage transistor developmenten_US
dc.typeTechnical Reporten_US
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Georgia Electronic Design Centeren_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programs


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