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dc.contributor.authorLee, Cheng-Tsungen_US
dc.contributor.authorYueh, Wangen_US
dc.contributor.authorRoberts, Jeanetteen_US
dc.contributor.authorHenderson, Clifford L.en_US
dc.date.accessioned2013-06-27T19:45:01Z
dc.date.available2013-06-27T19:45:01Z
dc.date.issued2007
dc.identifier.citationLee, Cheng-Tsung; Yueh, Wang; Roberts, Jeanette and Henderson, Clifford L., "A simple method for measurement of photoacid generator photoreaction kinetics in formulated, chemically amplified photoresist films," Electrochemical and Solid State Letters, Vol. 10, no.9, H273-H277 (2007).en_US
dc.identifier.issn1099-0062 (print) 1944-8775 (online)
dc.identifier.urihttp://hdl.handle.net/1853/48091
dc.description© 2007 The Electrochemical Society, Inc. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).en_US
dc.description.abstractA method which utilizes experimental measurement and modeling of photoacid-catalyzed deprotection rates obtained via Fourier transform infrared spectroscopy has been developed for determining photoacid generator PAG photoreaction rate constants i.e., Dill C parameters in protected polymer matrices. Numerical modeling of deprotection rates as a function of exposure dose and postexposure bake time is used to determine the Dill C parameters for the PAG in the actual resist matrix polymer of interest. This protocol is shown to be a fast, nondestructive, and material-saving technique that can permit measurement of Dill C parameters in reactive polymer matrixes.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectFourier transform spectraen_US
dc.subjectInfrared spectraen_US
dc.subjectPhotochemistryen_US
dc.subjectPhotoresistsen_US
dc.subjectPolymersen_US
dc.subjectReaction rate constantsen_US
dc.subjectSemiconductor process modellingen_US
dc.titleA simple method for measurement of photoacid generator photoreaction kinetics in formulated, chemically amplified photoresist filmsen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.publisher.originalElectrochemical Societyen_US
dc.identifier.doi10.1149/1.2751835en_US


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