Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide
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Graphene is widely considered to be a promising candidate for a new generation of electronics, but there are many outstanding fundamental issues that need to be addressed before this promise can be realized. This thesis focuses on the production and properties of graphene grown epitaxially on the carbon terminated face (C-face) of hexagonal silicon carbide leading to the construction of a novel graphene transistor structure. C-face epitaxial graphene multilayers are unique due to their rotational stacking that causes the individual layers to be electronically decoupled from each other. Well-formed C-face epitaxial graphene single layers have exceptionally high mobilities (exceeding 10,000 cm ²/Vs), which are significantly greater than those of Si-face graphene monolayers. This thesis investigates the growth and properties of C-face single layer graphene. A field effect transistor based on single layer graphene was fabricated and characterized for the first time. Aluminum oxide or boron nitride was used for the gate dielectric. Additionally, an all graphene/SiC Schottky barrier transistor on the C-face of SiC composed of 2DEG in SiC/Si₂O ₃ interface and multilayer graphene contacts was demonstrated. A multiple growth scheme was adopted to achieve this unique structure.