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dc.contributor.advisorGraham, Samuel
dc.contributor.authorSojoudi, Hossein
dc.date.accessioned2014-01-10T18:00:00Z
dc.date.available2014-01-10T18:00:00Z
dc.date.issued2012-08-22
dc.identifier.urihttp://hdl.handle.net/1853/50125
dc.description.abstractGraphene, a two-dimensional counterpart of three-dimensional graphite, has attracted significant interest, due to its distinctive electrical and mechanical properties, for developing electronic, optoelectronic, and sensor technologies. In general, doping of graphene is important, as it gives rise to p-type and n-type materials, and it adjusts the work function of the graphene. This adjustment is necessary in order to control charge injection and collection in devices such as solar cells and light emitting devices. Current methods for graphene doping involve high temperature process or interactions with chemicals that are not stable. Moreover, the process of transferring graphene from its growth substrate and its exposure to the environment results in a host of chemical groups that can become attached to the film and alter its electronic properties by accepting or donating electrons/holes. Intentional and controllable doping of the graphene, however, requires a deeper understanding of the impact of these groups. The proposed research will attempt to clarify the unintentional doping mechanism in graphene through adsorption or desorption of gas/vapor molecules found in standard environments. A low temperature, controllable and defect-free method for doping graphene layers will also be studied through modifying the interface of graphene and its support substrate with self-assembled monolayers (SAMs) which changes the work function and charge carriers in the graphene layer. Furthermore, current methods of chemical vapor deposition synthesis of graphene requires the film to be transferred onto a second substrate when the metal layer used for growth is not compatible with device fabrication or operation. To address this issue, the proposed work will investigate a new method for wafer scale, transfer-free synthesis of graphene on dielectric substrates using new carbon sources. This technique allows patterned synthesis on the target substrate and is compatible with standard device fabrication technologies; hence, it opens a new pathway for low cost, large area synthesis of graphene films.
dc.language.isoen_US
dc.publisherGeorgia Institute of Technology
dc.subjectGraphene
dc.subjectDoping
dc.subjectCharacterization
dc.subjectVacuum annealing
dc.subjectSelf assembled monolayers (SAMs)
dc.subjectTransfer-free synthesis
dc.subjectTrace carbon source
dc.subjectSolid carbon source
dc.subject.lcshGraphene
dc.subject.lcshThin films
dc.titleThe synthesis, doping, and characterization of graphene films
dc.typeDissertation
dc.description.degreePh.D.
dc.contributor.departmentMechanical Engineering
dc.contributor.committeeMemberCola, Baratunde
dc.contributor.committeeMemberHess, Dennis
dc.contributor.committeeMemberGarmestani, Hamid
dc.contributor.committeeMemberKalaitzidou, Kyriaki
dc.contributor.committeeMemberJiang, Zhigang


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