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dc.contributor.authorBrennan, Kevin F.en_US
dc.date.accessioned2014-10-10T13:09:43Z
dc.date.available2014-10-10T13:09:43Z
dc.date.issued1992en_US
dc.identifier.other362779en_US
dc.identifier.urihttp://hdl.handle.net/1853/52479
dc.descriptionIssued as Progress report, and Report, Project no. E-21-672 (continues project no. E-21-F42)en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.relation.ispartofseriesSchool of Electrical Engineering ; Project no. E-21-672en_US
dc.relation.ispartofseriesSchool of Electrical Engineering ; Project no. E-21-F42en_US
dc.subject.lcshImage intensifiersen_US
dc.subject.lcshGallium arsenideen_US
dc.subject.lcshDiodes, Semiconductoren_US
dc.titleGaInPen_US
dc.typeTechnical Reporten_US
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical Engineeringen_US


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