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dc.contributor.authorMueller, Brennen K.
dc.contributor.authorSchwartz, Jared M.
dc.contributor.authorSutlief, Alexandra E.
dc.contributor.authorBell, William K.
dc.contributor.authorHayes, Colin O.
dc.contributor.authorElce, Edmund
dc.contributor.authorWillson, C. Grant
dc.contributor.authorKohl, Paul A.
dc.date.accessioned2015-03-02T19:25:29Z
dc.date.available2015-03-02T19:25:29Z
dc.date.issued2014-05
dc.identifier.citationMueller, Brennen K., et al. "Chemically Amplified, Positive Tone, Polynorbornene Dielectric for Microelectronics Packaging". ECS J. Solid State Sci. Technol. 2015 4(1): N3001-N3007; doi:10.1149/2.0011501jssen_US
dc.identifier.urihttp://hdl.handle.net/1853/53202
dc.descriptionPresented at the Orlando, Florida, Meeting of the ECS Society, May 11–15, 2014.en_US
dc.descriptionhttp://dx.doi.org/10.1149/2.0011501jss
dc.description.abstractA low permittivity, positive tone, polynorbornene dielectric has been developed that exhibits excellent lithographic and electrical properties. The polymer resin is a random copolymer of a norbornene hexafluoroalcohol (NBHFA) and a norbornene tert-butyl ester (NBTBE). High optical sensitivity and contrast were achieved using a chemically amplified solubility switching mechanism through the acid-catalyzed deprotection of the tert-butyl ester functionality. After developing in aqueous base, the film was thermally cured through a Fischer esterification reaction, resulting in a cross-linked permanent dielectric. The effect of the photoacid generator (PAG) concentration on the lithographic patterning and curing reactions was studied. Higher PAG loading was favorable for both sensitivity and dielectric constant. The sensitivity of a formulation was measured as low as 8.09 mJ/cm2. The molar ratio of the two monomers composing the polymer was varied. A higher NBHFA content was favorable because it resulted in a lower modulus, lower shrinkage, and lower dielectric constant and loss. A formulation with 70 mol% of the NBHFA had a modulus of 2.60 GPa, a 12.2% volume decrease during cure, and a dielectric constant of 2.23. The direction-dependent coefficient of thermal expansion was measured, and it was found that the anisotropy of the PNB films decreased with higher NBTBE content.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.rightsThis work is licensed under Creative Commons Attribution (unported, v4.0) License.
dc.subjectPolynorbornene dielectricen_US
dc.subjectLithographic propertiesen_US
dc.subjectElectrical propertiesen_US
dc.titleChemically Amplified, Positive Tone, Polynorbornene Dielectric for Microelectronics Packagingen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemical and Biomolecular Engineeringen_US
dc.contributor.corporatenameUniversity of Texas at Austin. Department of Chemistryen_US
dc.identifier.doihttp://dx.doi.org/10.1149/2.0011501jss
dc.embargo.termsnullen_US


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