Show simple item record

dc.contributor.authorReichmanis, Elsa
dc.date.accessioned2016-01-29T20:52:45Z
dc.date.available2016-01-29T20:52:45Z
dc.date.issued2016-01-26
dc.identifier.urihttp://hdl.handle.net/1853/54516
dc.descriptionPresented at the Nano@Tech Meeting on January 26, 2016 at 12:00 p.m. in room 1116-1118 of the Marcus Nanotechnology Building on the Georgia Tech campus.en_US
dc.descriptionElsa Raichmanis is Brook Byars Professor of Sustainability and Professor, Chemical and Biomolacular Engineering at Georgia Tech. Prior to joining Georgia Tech she was Bell Labs Fallow and Director of the Materials Research Department at Bell Labs, Alcatel-Lucent. She received her Ph.D. and BS degrees in chemistry from Syracuse University. In 1984, she was promoted to Supervisor of the Radiation Sensitive Materials and Application Group, followed by promotion to Head of the Polymer and Organic Materials Research Department in 1994. Dr. Raichmanis was elected to the National Academy of Engineering in 1995 and has participated in several National Research Council (NRC) activities. She has been active in the American Chemical Society throughout her career, having served as 2003 President of the Society. In other service, she is associate editor of the ACS Journal, Chemistry of Materials. Dr. Raichmanis is the recipient of several awards, including named university lectureships. Sha was awarded the ACS Award in Applied Polymer Science in 1999, and is the 2001 recipient of the Society of Chemical Industry's Parkin Medal. Har research interests include the chemistry, properties and application of materials technologies for photonic and electronic applications, with particular focus on polymeric and nanostructurad materials for advanced technologies. The Raichmanis research group is cum:intly exploring polymeric and hybrid organic/inorganic materials chemistries for electronic and photonic applications, plastic electronics in particular.
dc.descriptionRuntime: 42:55 minutes
dc.description.abstractPolymeric semiconductors are promising materials for the commercialization of large‐area, low‐cost and flexible electronics. Their electrical properties are extremely sensitive to structure at multiple length scales, and process modifications can impact calculated hole mobilities by up to four orders of magnitude. For the readily available semiconducting polymer, poly(3‐hexylthiophene) (P3HT), various microstructural features that correlate well with hole mobility have been identified. These include paracrystalline disorder, exciton bandwidth, polymer molecular weight, orientation of crystalline domains, and inter‐grain connectivity. Here, a set of general, robust analysis algorithms will be presented that can be used to statistically quantify two‐dimensional order in microstructures of P3HT‐based OFET devices. Application of these analytical techniques to a variety of shear‐based processing methods indicate that shear‐driven alignment of P3HT fibers can effect substantial improvements in macroscale mobility.en_US
dc.format.extent42:55 minutes
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.relation.ispartofseriesNano@Tech Lecture Seriesen_US
dc.subjectNanotechnologyen_US
dc.subjectPolymeric semiconductoren_US
dc.subjectPolymersen_US
dc.titleStructure – Process - Property Relationships Governing Solution Processed Semiconductor Performanceen_US
dc.typeLectureen_US
dc.typeVideoen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Institute for Electronics and Nanotechnologyen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemical and Biomolecular Engineeringen_US
dc.embargo.termsnullen_US


Files in this item

Thumbnail
Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record