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dc.contributor.advisorDoolittle, William A.
dc.contributor.authorShank, Joshua
dc.date.accessioned2016-08-22T12:21:21Z
dc.date.available2016-08-22T12:21:21Z
dc.date.created2015-08
dc.date.issued2015-07-27
dc.date.submittedAugust 2015
dc.identifier.urihttp://hdl.handle.net/1853/55549
dc.description.abstractThe objective of the proposed research is to develop a simple simulation model that describes volatile memristive devices and enables the evaluation of these devices in larger circuits. Specifically, a physics based model is developed that describes the motion of ions through mixed ion-electron conducting materials. This physics based model, which is too computationally intensive for large scale circuit simulations, is reduced to a geometry specific model compatible with circuit simulation programs such as SPICE. Finally, this simple model is evaluated against experimental devices and predictions are made on how these devices will perform in an example circuit.
dc.format.mimetypeapplication/pdf
dc.publisherGeorgia Institute of Technology
dc.subjectVolatile memristor
dc.subjectModel
dc.titleGeneralized model and applications for volatile memristive devices
dc.typeThesis
dc.description.degreeM.S.
dc.contributor.departmentElectrical and Computer Engineering
thesis.degree.levelMasters
dc.contributor.committeeMemberYoder, Paul D.
dc.contributor.committeeMemberAlamgir, Faisal
dc.date.updated2016-08-22T12:21:21Z


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