Methods Of Forming Micro-electromichanical Resonators Having Boron-doped Resonator Bodies Containing Eutectic Alloys

Abstract

A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1 X 10¹⁸ cm⁻³ and even greater than about 1 X 10¹⁹ cm⁻³, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.