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    Methods Of Forming Micro-electromichanical Resonators Having Boron-doped Resonator Bodies Containing Eutectic Alloys

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    Date
    1/15/2013
    Author
    Ayazi, Farrokh
    Samarao, Ashwin
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    Abstract
    A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1 X 10¹⁸ cm⁻³ and even greater than about 1 X 10¹⁹ cm⁻³, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.
    URI
    http://hdl.handle.net/1853/56728
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