• Login
    View Item 
    •   SMARTech Home
    • Georgia Tech Patents
    • Georgia Tech Patents
    • View Item
    •   SMARTech Home
    • Georgia Tech Patents
    • Georgia Tech Patents
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Transverse Force, Pressure And Vibration Sensors Using Piezoelectric Nanostructures

    Thumbnail
    View/Open
    8421052.pdf (456.3Kb)
    Date
    4/16/2013
    Author
    Wang, Zhong L.
    Fei, Peng
    Metadata
    Show full item record
    Abstract
    An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure.
    URI
    http://hdl.handle.net/1853/56759
    Collections
    • Georgia Tech Patents [1526]

    Browse

    All of SMARTechCommunities & CollectionsDatesAuthorsTitlesSubjectsTypesThis CollectionDatesAuthorsTitlesSubjectsTypes

    My SMARTech

    Login

    Statistics

    View Usage StatisticsView Google Analytics Statistics
    facebook instagram twitter youtube
    • My Account
    • Contact us
    • Directory
    • Campus Map
    • Support/Give
    • Library Accessibility
      • About SMARTech
      • SMARTech Terms of Use
    Georgia Tech Library266 4th Street NW, Atlanta, GA 30332
    404.894.4500
    • Emergency Information
    • Legal and Privacy Information
    • Human Trafficking Notice
    • Accessibility
    • Accountability
    • Accreditation
    • Employment
    © 2020 Georgia Institute of Technology