dc.date.accessioned | 2017-05-12T14:26:00Z | |
dc.date.available | 2017-05-12T14:26:00Z | |
dc.date.issued | 4/16/2013 | |
dc.identifier.uri | http://hdl.handle.net/1853/56759 | |
dc.description.abstract | An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure. | |
dc.title | Transverse Force, Pressure And Vibration Sensors Using Piezoelectric Nanostructures | |
dc.type | Text | |
dc.type.genre | Patent | |
dc.contributor.patentcreator | Wang, Zhong L. | |
dc.contributor.patentcreator | Fei, Peng | |
dc.identifier.patentnumber | 8421052 | |
dc.description.assignee | Georgia Tech Research Corporation | |
dc.identifier.patentapplicationnumber | 12/855766 | |
dc.date.filed | 8/13/2010 | |
dc.identifier.uspc | 257/9 | |
dc.identifier.cpc | H04R17/02 | |
dc.identifier.cpc | H04R31/006 | |
dc.identifier.cpc | B82Y10/00 | |