Chemical Vapor Deposition Of Transistion Metals
Coatings of Group IIA metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## wherein M is a transition metal of Group VB, VIB, VIIB or VIII, R1 is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, R2 is a hydrogen or lower alkyl or alkenyl radical, n is the valence of M and is an integer from 2 to 4, and p is an integer from 0 to (n-1), is contacted with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as manganese telluride can be deposited from a manganese compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.
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