Low Temperature Metal Etching And Patterning
Hess, Dennis W.
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The present invention is directed to a method and apparatus for etching various metals that may be used in semiconductor or integrated circuit processing through the use of non-halogen gases such as hydrogen, helium, or combinations of hydrogen and helium with other gases such as argon. In one exemplary embodiment of the present invention, in a reaction chamber, a substrate having a metal interconnect layer deposited thereon is exposed to a plasma formed of non-halogen gas. The plasma generated is maintained for a certain period of time to provide for a desired or expected etching of the metal. In some embodiments, the metal interconnect layer may be copper, gold or silver.
- Georgia Tech Patents