Methods For Growing A Non-phase Separated Group-iii Nitride Semiconductor Alloy

Abstract

Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.