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    Temperature Compensation In A Semiconductor Micromechanical Resonator Via Charge Carrier Depletion

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    Date
    4/19/2016
    Author
    Ayazi, Farrokh
    Samarao, Ashwin
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    Abstract
    A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.
    URI
    http://hdl.handle.net/1853/57077
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