Method And Apparatus For Low Energy Electron Enhanced Etching Of Substrates

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Date
3/16/1999Author
Martin, Kevin P.
Gillis, Harry P.
Choutov, Dmitri A.
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A method of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.
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- Georgia Tech Patents [1761]