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dc.date.accessioned2017-05-12T14:27:25Z
dc.date.available2017-05-12T14:27:25Z
dc.date.issued3/16/1999
dc.identifier.urihttp://hdl.handle.net/1853/57291
dc.description.abstractA method of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.
dc.titleMethod And Apparatus For Low Energy Electron Enhanced Etching Of Substrates
dc.typePatent
dc.contributor.patentcreatorMartin, Kevin P.
dc.contributor.patentcreatorGillis, Harry P.
dc.contributor.patentcreatorChoutov, Dmitri A.
dc.identifier.patentnumber5882538
dc.description.assigneeGeorgia Tech Research Corporation
dc.identifier.patentapplicationnumber08/705902
dc.date.filed8/28/1996
dc.identifier.uspc216/71
dc.identifier.cpcH01J37/32018
dc.identifier.cpcH01J37/32596
dc.identifier.cpcH01J37/32027


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