Show simple item record

dc.date.accessioned2017-05-12T14:27:36Z
dc.date.available2017-05-12T14:27:36Z
dc.date.issued12/26/2000
dc.identifier.urihttp://hdl.handle.net/1853/57368
dc.description.abstractA method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a norbornene-type polymer is used as a sacrificial material to occupy a closed interior volume in a semiconductor structure. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, preferably by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the norbornene-type polymer. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.
dc.titleFabrication Of A Semiconductor Device With Air Gaps For Ultra-low Capacitance Interconnections
dc.typePatent
dc.contributor.patentcreatorKohl, Paul A.
dc.contributor.patentcreatorZhao, Qiang
dc.contributor.patentcreatorBidstrup Allen, Sue Ann
dc.identifier.patentnumber6165890
dc.description.assigneeGeorgia Tech Research Corporation
dc.identifier.patentapplicationnumber09/009952
dc.date.filed1/21/1998
dc.identifier.uspc438/619
dc.identifier.cpcH01L21/7682
dc.identifier.cpcH01L23/5222
dc.identifier.cpcH01L2924/12044


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record