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    Semiconducting Oxide Nanostructures

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    6586095.pdf (399.4Kb)
    Date
    7/1/2003
    Author
    Wang, Zhong L.
    Pan, Zhengwei
    Dai, Zurong
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    Abstract
    Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.
    URI
    http://hdl.handle.net/1853/57488
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