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dc.date.accessioned2017-05-12T14:28:18Z
dc.date.available2017-05-12T14:28:18Z
dc.date.issued2/6/2007
dc.identifier.urihttp://hdl.handle.net/1853/57668
dc.description.abstractSemiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalate on III-Nitrides and Silicon Carbide substrates. The semiconductor devices provide good lattice matching characteristics between the substrate and the material that is deposited upon the substrate. The method of forming such semiconductor devices, which is also disclosed, enables fabrication of periodically-poled devices in a manner that is advantageous in comparison to existing technologies.
dc.titleSemiconductor Devices Formed Of III-Nitride Compounds, Lithium-Niobate-Tantalate, And Silicon Carbide
dc.typePatent
dc.contributor.patentcreatorDoolittle, William Alan
dc.identifier.patentnumber7173286
dc.description.assigneeGeorgia Tech Research Corporation
dc.identifier.patentapplicationnumber10/367275
dc.date.filed2/14/2003
dc.identifier.uspc257/78
dc.identifier.cpcH01L29/1608
dc.identifier.cpcH01L29/267
dc.identifier.cpcH01L31/0304


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