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dc.date.accessioned2017-05-12T14:28:18Z
dc.date.available2017-05-12T14:28:18Z
dc.date.issued3/6/2007
dc.identifier.urihttp://hdl.handle.net/1853/57673
dc.description.abstractNanostructures and methods of fabrication thereof are disclosed. One representative nanostructure includes a silicon dioxide (SiO2)/tin oxide (SnOx) nanostructure, where x is between about 1 to about 2. The SiO2/SnOx nanostructure includes a SiO2 nanostructure having SnOx nanoclusters dispersed over a portion of the surface of the SiO2 nanostructure.
dc.titleSilicon Based Nanospheres And Nanowires
dc.typePatent
dc.contributor.patentcreatorGole, James L.
dc.contributor.patentcreatorWang, Zhong L.
dc.identifier.patentnumber7186669
dc.description.assigneeGeorgia Tech Research Corporation
dc.identifier.patentapplicationnumber10/261148
dc.date.filed9/30/2002
dc.identifier.uspc502/242
dc.identifier.cpcB01J23/14
dc.identifier.cpcC01B33/18
dc.identifier.cpcC04B35/62805


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