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dc.date.accessioned2017-05-12T14:28:38Z
dc.date.available2017-05-12T14:28:38Z
dc.date.issued3/31/2009
dc.identifier.urihttp://hdl.handle.net/1853/57790
dc.description.abstractDisclosed are capacitive micromechanical resonators optimized for high Q, low motional impedance, and large tuning range. Exemplary resonators were fabricated using a HARPSS-on-SOI process, and demonstrated quality factors up to 119000 in vacuum. For resonators operating between 3 MHz and 30 MHz, the lowest extracted impedance is 218 kΩ and the largest electrostatic tuning coefficient is -240 ppm/V2. The disclosed designs are applicable up to at least 200 MHz operation. An oscillator interface circuit comprising of a trans-impedance amplifier and an automatic bias generator providing a temperature-compensating bias voltage is also disclosed. Experiments show temperature drift reduction from 2800 ppm to 39 ppm over a 100° C. range. Process compensation (DFM) of micromechanical resonators, resonators having mass loading elements that allow generation of closely spaced frequencies, and coupled systems comprising of the resonators are also described.
dc.titleHighly Tunable Low-Impedance Capacitive Micromechanical Resonators, Oscillators, And Processes Relating Thereto
dc.contributor.patentcreatorHo, Gavin Kar-Fai
dc.contributor.patentcreatorAyazi, Farrokh
dc.contributor.patentcreatorPourkamali, Siavash
dc.contributor.patentcreatorSundaresan, Krishnakumar
dc.identifier.patentnumber7511870
dc.description.assigneeGeorgia Tech Research Corp.
dc.identifier.patentapplicationnumber11/251197
dc.date.filed10/15/2005
dc.identifier.uspc359/237
dc.identifier.cpcH03B5/30
dc.identifier.cpcH03H9/02244
dc.identifier.cpcH03H9/02338


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