Show simple item record

dc.date.accessioned2017-05-12T14:28:49Z
dc.date.available2017-05-12T14:28:49Z
dc.date.issued8/3/2010
dc.identifier.urihttp://hdl.handle.net/1853/57869
dc.description.abstractDisclosed are methods for fabricating encapsulated microelectromechanical systems (MEMS) devices. A MEMS device fabricated on a CMOS wafer is encapsulated using an etch resistant thin film layer prior to the release of the MEMS device. Once CMOS processing is completed, the wafer is etched to release the MEMS device. If the MEMS is fabricated on a silicon-on-insulator (SOI) wafer, the buried oxide of the SOI wafer acts as an etch stop for the etching. A sacrificial layer(s) is accessed and removed from the back side of the wafer, while the front side of the wafer is protected by a masking layer. The MEMS device is released without having any detrimental effects on CMOS components. If desired, the wafer can be mounted on another substrate to provide hermetic or semi-hermetic sealing of the device.
dc.titleMethod For Sealing And Backside Releasing Of Microelectromechanical Systems
dc.typePatent
dc.contributor.patentcreatorAyazi, Farrokh
dc.identifier.patentnumber7767484
dc.description.assigneeGeorgia Tech Research Corporation
dc.identifier.patentapplicationnumber11/807848
dc.date.filed5/30/2007
dc.identifier.uspc438/52
dc.identifier.cpcB81C1/00285
dc.identifier.cpcB81C1/00476
dc.identifier.cpcB81B2207/015


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record