• Login
    View Item 
    •   SMARTech Home
    • Georgia Tech Patents
    • Georgia Tech Patents
    • View Item
    •   SMARTech Home
    • Georgia Tech Patents
    • Georgia Tech Patents
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Cadmium Sulfide Quantum Dot Lasing In Room Temperature Liquid Solution

    Thumbnail
    View/Open
    7778301.pdf (384.9Kb)
    Date
    8/17/2010
    Author
    El-Sayed, Mostafa A.
    Qian, Wei
    Darugar, Qusai
    Metadata
    Show full item record
    Abstract
    Disclosed is a lasing complex comprising a room temperature solution containing cadmium sulfide (CdS) quantum dots. Optical gain has been observed in CdS nanocrystal quantum dots in strong confinement regime in toluene solution at room temperature using femtosecond transient absorption techniques. The optical gain lifetime is measured to be 20 picoseconds under pump fluence of 0.77 mJ/cm2. The relative lower gain threshold compared to that of CdSe quantum dots is attributed to the long lifetime of fluorescence and biexcitons and the relatively sharp photoluminescence linewidth. The CdS nanocrystals are excellent gain media for semiconductor quantum dot based blue lasers.
    URI
    http://hdl.handle.net/1853/57875
    Collections
    • Georgia Tech Patents [1761]

    Browse

    All of SMARTechCommunities & CollectionsDatesAuthorsTitlesSubjectsTypesThis CollectionDatesAuthorsTitlesSubjectsTypes

    My SMARTech

    Login

    Statistics

    View Usage StatisticsView Google Analytics Statistics
    facebook instagram twitter youtube
    • My Account
    • Contact us
    • Directory
    • Campus Map
    • Support/Give
    • Library Accessibility
      • About SMARTech
      • SMARTech Terms of Use
    Georgia Tech Library266 4th Street NW, Atlanta, GA 30332
    404.894.4500
    • Emergency Information
    • Legal and Privacy Information
    • Human Trafficking Notice
    • Accessibility
    • Accountability
    • Accreditation
    • Employment
    © 2020 Georgia Institute of Technology