Boron Diffusion In Silicon Devices

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Date
9/7/2010Author
Rohatgi, Ajeet
Kim, Dong Seop
Nakayashiki, Kenta
Rounsaville, Brian
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Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.
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- Georgia Tech Patents [1761]