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    Boron Diffusion In Silicon Devices

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    7790574.pdf (419.3Kb)
    Date
    9/7/2010
    Author
    Rohatgi, Ajeet
    Kim, Dong Seop
    Nakayashiki, Kenta
    Rounsaville, Brian
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    Abstract
    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.
    URI
    http://hdl.handle.net/1853/57878
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