Systems, Methods, And Apparatuses For High Power Complementary Metal Oxide Semiconductor (cmos) Antenna Switches Using Body Switching And Substrate Junction Diode Controlling In Multistacking Structure
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Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a ?60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.
- Georgia Tech Patents