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    Nitride/zinc Oxide Based Light-emitting Diodes

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    7888669.pdf (519.1Kb)
    Date
    2/15/2011
    Author
    Namkoong, Gon
    Doolittle, William Alan
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    Abstract
    A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al_(1-x-y)In_(x)Ga_(y)N; 0<=x<1, 0<y<=1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al_(1-x-y)In_(x)Ga_(y)N/GaN; 0<=x<1, 0<y<=1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.
    URI
    http://hdl.handle.net/1853/57926
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