Nitride/zinc Oxide Based Light-emitting Diodes

Abstract

A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al_(1-x-y)In_(x)Ga_(y)N; 0<=x<1, 0<y<=1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al_(1-x-y)In_(x)Ga_(y)N/GaN; 0<=x<1, 0<y<=1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.