• Login
    View Item 
    •   SMARTech Home
    • Georgia Tech Patents
    • Georgia Tech Patents
    • View Item
    •   SMARTech Home
    • Georgia Tech Patents
    • Georgia Tech Patents
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Polariscope Stress Measurement Tool And Method Of Use

    Thumbnail
    View/Open
    8264675.pdf (3.227Mb)
    Date
    9/11/2012
    Author
    Danyluk, Steven
    Li, Fang
    Metadata
    Show full item record
    Abstract
    The present invention provides a tool for and method of using an infrared transmission technique to extract the full stress components of the in-plane residual stresses in thin, multi crystalline silicon wafers including in situ measurement of residual stress for large cast wafers. The shear difference method is used to obtain full stress components by integrating the shear stress map from the boundaries. System ambiguity at the boundaries is resolved completely by introducing a new analytical function. A new anisotropic stress optic law is provided, and stress optic coefficients are calibrated for different crystal grain orientations and stress orientations.
    URI
    http://hdl.handle.net/1853/58080
    Collections
    • Georgia Tech Patents [1761]

    Browse

    All of SMARTechCommunities & CollectionsDatesAuthorsTitlesSubjectsTypesThis CollectionDatesAuthorsTitlesSubjectsTypes

    My SMARTech

    Login

    Statistics

    View Usage StatisticsView Google Analytics Statistics
    facebook instagram twitter youtube
    • My Account
    • Contact us
    • Directory
    • Campus Map
    • Support/Give
    • Library Accessibility
      • About SMARTech
      • SMARTech Terms of Use
    Georgia Tech Library266 4th Street NW, Atlanta, GA 30332
    404.894.4500
    • Emergency Information
    • Legal and Privacy Information
    • Human Trafficking Notice
    • Accessibility
    • Accountability
    • Accreditation
    • Employment
    © 2020 Georgia Institute of Technology