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dc.contributor.advisorShen, Shyh-Chiang
dc.contributor.authorKao, Tsung-Ting
dc.date.accessioned2018-01-22T21:00:26Z
dc.date.available2018-01-22T21:00:26Z
dc.date.created2016-12
dc.date.issued2016-08-26
dc.date.submittedDecember 2016
dc.identifier.urihttp://hdl.handle.net/1853/59114
dc.description.abstractIII-nitride (III-N) materials have been widely used in optical devices such as blue light-emitting diodes today. On the other hand, III-N power electronics are also promising for the next-generation high-voltage and high-power applications because of the high breakdown voltage, high power handling capability, and high-temperature operation capability. The research involves the current development of III-N bipolar devices at Georgia Tech. The device design, fabrication process development, and device characterization are focused on different III-N bipolar devices: (1) GaN homojunction p-i-n rectifiers achieve a breakdown voltage >800 V with an extremely low specific on-resistance of 0.28 mΩ-cm2. The temperature-dependent characteristics of GaN p-i-n rectifiers will also be discussed. (2) The InGaN/GaN avalanche phototransistors (APTs) developed at GT demonstrate high responsivity (>300 A/W) and high ultraviolet-to-visible-band rejection ratio (>8×103) under UV light illumination. (3) The development of UV light emitters is also presented in the research works, including optically pumped DUV laser, electrically pumped DUV light emitting diodes (LEDs) and UV resonant-cavity LEDs.
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherGeorgia Institute of Technology
dc.subjectIII-N devices
dc.subjectCompound semiconductor
dc.titleDevelopment and characterization of III-Nitride bipolar devices
dc.typeDissertation
dc.description.degreePh.D.
dc.contributor.departmentElectrical and Computer Engineering
thesis.degree.levelDoctoral
dc.contributor.committeeMemberDupuis, Russell D.
dc.contributor.committeeMemberYoder, Paul D.
dc.contributor.committeeMemberBakir, Muhannad S.
dc.contributor.committeeMemberGraham, Samuel
dc.date.updated2018-01-22T21:00:26Z


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