Fabrication and characterization of epitaxial graphene nanoribbon transport devices
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Patterned growth of epitaxial graphene has piqued the interest of the scientific community by revealing an interesting structure with a lot of potential: the sidewall nanoribbon. Epitaxial graphene is produced by confinement-controlled sublimation of silicon carbide. With the right growth conditions, graphene on the silicon face will be confined to topographical steps on the surface. The nanoribbon produced in this fashion is of high quality with crystallographic edges and few defects. Its transport properties, such as mobility and mean free path, are competitive with industrial transmission lines. In this dissertation, I will examine the transport properties of epitaxial graphene nanoribbon and its potential for use as a property-rich transmission line. Two directions of experimentation are taken: the first focuses on the superconducting proximity effect and the second on the electrical noise in response to a gate. These experiments reflect the diversity in properties held by the sidewall structure, with one aiming to explore the spin-polarization of the ribbon and the other focused on more traditional electronic transport and use of the ribbon for competitive integrated electronics.