Staggered pattern energy harvesting and retro-directive backscatter communications for passive RFID tags and sensors
Marshall, Blake Ryan
MetadataShow full item record
This work introduces an optimal backscatter and energy harvesting solution for radio frequency identification (RFID) by using N antennas with N ports called a staggered patterned and retro-directive (SPAR) tag. By using multiple ports and a unitary scattering matrix on the SPAR tag, the structure is able to create multiple orthogonal radiation patterns to improve range of passive RFID tags. This is demonstrated on a 5.8 GHz RFID tag using a two-element patch antenna array fed by a 90˚ hybrid. In addition to canonical designs, new SPAR structures are hypothesized with optimized size, bandwidth, etc. A co-simulator is developed capable of searching a vast space of possible feed networks with N-by-N ports that meet the requirements of a unitary scattering matrix. A new structure that meets the 2-by-2 SPAR scattering matrix requirements is presented to demonstrate the capabilities of the software. The software can also be generalized to discover new physical structures of larger N−by−N SPAR tags or other microwave devices.
Showing items related by title, author, creator and subject.
Frohberg, Nicholas JamesCell separation is utilized for a variety of purposes in biomedicine, including clinical diagnosis, or batch purification or rare cell isolation within a research laboratory setting. The currently used methods for cell ...
Effects of passivation treatments on corrosion behavior and passive film composition for 316L stainless steel and alloy MP 35N Olander, Andrew F. (Georgia Institute of Technology, 1993-05)
Effective Passivation of the Low Resistivity Silicon Surface by a Rapid Thermal Oxide/PECVD Silicon Nitride Stack and Its Application to Passivated Rear and Bifacial Si Solar Cells Rohatgi, Ajeet; Narasimha, S.; Ruby, D. S. (Georgia Institute of Technology, 1998-07)A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thermal SiO(2) (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 em/s at the 1.3 ...