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dc.contributor.advisorCressler, John D.
dc.contributor.authorFleetwood, Zachary Evan
dc.date.accessioned2018-05-31T18:15:12Z
dc.date.available2018-05-31T18:15:12Z
dc.date.created2018-05
dc.date.issued2018-04-03
dc.date.submittedMay 2018
dc.identifier.urihttp://hdl.handle.net/1853/59891
dc.description.abstractThe objective of this thesis is to investigate the robustness of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) to radiation-induced damage. The work described in this document delves into both total ionizing dose (TID) and single-event effect (SEE) mechanisms. Background information is provided for the general operation of SiGe HBTs and basic radiation effects (generic and specifically for SiGe HBTs). Four unique investigations are covered in this work: the first two focus on TID effects for high dose environments and to investigate enhanced-low-dose-rate-sensitivity, and the latter two studies investigate advances in hardening SiGe HBT profiles and methods to conduct SEE experiments using pulsed-lasers in place of highly energetic ionized particles.
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherGeorgia Institute of Technology
dc.subjectSiGe HBT
dc.subjectTID
dc.subjectSEE
dc.subjectRadiation
dc.subjectSuperjunction
dc.subjectDD
dc.subjectProfile modifications
dc.titleQualifying silicon-germanium electronics for harsh radiation environments
dc.typeDissertation
dc.description.degreePh.D.
dc.contributor.departmentElectrical and Computer Engineering
thesis.degree.levelDoctoral
dc.contributor.committeeMemberYoder, Paul D.
dc.contributor.committeeMemberVogel, Eric M.
dc.contributor.committeeMemberSchmidt, Britney E.
dc.contributor.committeeMemberBakir, Muhannad S.
dc.date.updated2018-05-31T18:15:12Z


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