Characterization and modeling of hot carrier degradation in silicon-germanium HBTs
Wier, Brian R.
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This thesis describes the characterization and modeling of various hot carrier degradation mechanisms in silicon-germanium heterojunction bipolar transistors. An analysis of measured stress data and TCAD simulations for a SiGe HBT operated at high current densities is presented. Additionally, the framework for a compact model implementation of mixed-mode degradation is described.