Browsing School of Materials Science and Engineering (MSE) by Subject "III-V semiconductors"
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Configurations of misfit dislocations at interfaces of lattice-matched Ga₀.₅In₀.₅P/GaAs heterostructures (Georgia Institute of TechnologyAmerican Institute of Physics, 2000-07-10)A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ~3.5 nm. The ...