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dc.contributor.advisorWang, Hua
dc.contributor.authorChi, Taiyun
dc.date.accessioned2019-01-16T17:21:13Z
dc.date.available2019-01-16T17:21:13Z
dc.date.created2017-12
dc.date.issued2017-11-13
dc.date.submittedDecember 2017
dc.identifier.urihttp://hdl.handle.net/1853/60709
dc.description.abstractMillimeter-wave (mm-wave) and Terahertz (THz) frequency range is generally defined as frequencies between 30GHz to 3THz. With the recent advancement in mm-wave/THz technologies, it has shown great promise in a wide range of emerging applications, such as high-speed wireless communication, non-invasive imaging, biomedical sensing, non-destructive quality control, and spectroscopy. Until recently, mm-wave/THz systems have been mostly dominated by compound III-V processes and quasi-optical approaches. In this dissertation, we will present our design philosophies and approaches towards the development of fully integrated signal generation and detection systems for various emerging applications at mm-wave and THz using advanced silicon technologies.
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherGeorgia Institute of Technology
dc.subjectMillimeter-wave
dc.subjectTerahertz
dc.subjectIntegrated circuits
dc.titleMillimeter-wave and terahertz signal generation and detection in silicon
dc.typeDissertation
dc.description.degreePh.D.
dc.contributor.departmentElectrical and Computer Engineering
thesis.degree.levelDoctoral
dc.contributor.committeeMemberAdibi, Ali
dc.contributor.committeeMemberPeterson, Andrew
dc.contributor.committeeMemberBakir, Muhannad
dc.contributor.committeeMemberPapapolymerou, John
dc.contributor.committeeMemberWambacq, Piet
dc.date.updated2019-01-16T17:21:13Z


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