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    Atomic scale properties of epitaxial graphene grown on sic(0001) 

    Rutter, Gregory Michael (Georgia Institute of Technology, 2008-11-17)
    Graphene, a honeycomb lattice of sp2-bonded carbon atoms, has received considerable attention in the scientific community due to its unique electronic properties. Distinct symmetries of the graphene wave functions lead ...
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    Theoretical studies of the epitaxial growth of graphene 

    Ming, Fan (Georgia Institute of Technology, 2011-10-24)
    Graphene, a sheet of carbon atoms organized in a honeycomb lattice, is a two dimensional crystal. Even though the material has been known for a long time, only recently has it stimulated considerable interest across different ...

    Equilibrium and dynamical properties of epitaxial ferroelectric heterostructures 

    Kim, Yeongkwan (Georgia Institute of Technology, 1996-05)
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    Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication 

    Sprinkle, Michael W. (Georgia Institute of Technology, 2010-06-04)
    In the past several years, epitaxial graphene on silicon carbide has been transformed from an academic curiosity of social scientists to a leading candidate material to replace silicon in post-CMOS electronics. This has ...

    Dynamics of epitaxial growth and recovery 

    Luse, Christopher (Georgia Institute of Technology, 1994-08)
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    Atomic-scale spectroscopy and mapping of magnetic states in epitaxial graphene 

    Miller, David Lee (Georgia Institute of Technology, 2010-11-15)
    Graphene grown epitaxially on silicon carbide provides a potential avenue toward industrial-scale graphene electronics. A predominant aspect of the multilayer graphene produced on the carbon-terminated (000 -1) face of SiC ...

    Growth phenomena and domain formation in ferroelectric thin films 

    Kwak, Byung-Sung Leo (Georgia Institute of Technology, 1992-08)

    Effects of strain on heteroepitaxial growth dynamics 

    Rätsch, Christian (Georgia Institute of Technology, 1994-08)
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    Structural characterization of epitaxial graphene on silicon carbide 

    Hass, Joanna R. (Georgia Institute of Technology, 2008-11-17)
    Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon successor to silicon electronics. Ballistic conduction at room temperature and a linear dispersion relation that causes ...
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    Microscopic and spectroscopic studies of growth and electronic structure of epitaxial graphene 

    Sharma, Nikhil (Georgia Institute of Technology, 2009-04-06)
    It is generally believed that the Si technology is going to hit a road block soon. Amongst all the potential candidates, graphene shows the most promise as replacement material for the aging Si technology. This has caused ...
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    AuthorCullen, William G. (1)Hass, Joanna R. (1)Hu, Yike (1)Kim, Yeongkwan (1)Kwak, Byung-Sung Leo (1)Li, Xuebin (1)Li, Yuntao (1)Luse, Christopher (1)Miller, David Lee (1)Ming, Fan (1)... View MoreSubject
    Epitaxy (20)
    Graphene (11)Epitaxial graphene (7)Silicon carbide (6)Crystal growth (5)Nanoelectronics (3)Scanning tunneling microscopy (3)STM (3)Carbon and graphite products (2)Crystal lattices (2)... View MoreDate Issued2010 - 2016 (6)2000 - 2009 (6)1990 - 1999 (8)Has File(s)Yes (20)
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