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Kinetics of heteroepitaxy
(Georgia Institute of Technology, 2003-10-31)
Microscopic and spectroscopic studies of growth and electronic structure of epitaxial graphene
(Georgia Institute of Technology, 2009-04-06)
It is generally believed that the Si technology is going to hit a road block soon. Amongst all the potential candidates, graphene shows the most promise as replacement material for the aging Si technology. This has caused ...
Structural characterization of epitaxial graphene on silicon carbide
(Georgia Institute of Technology, 2008-11-17)
Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon successor to silicon electronics. Ballistic conduction at room temperature and a linear dispersion relation that causes ...
Fabrication and Characterization of Nanopatterned Epitaxial Graphene Films for Carbon Based Electronics
(Georgia Institute of Technology, 2006-11-09)
In this thesis, we show that planar graphene ribbons have properties similar to those of nanotubes. Both exhibit semiconducting or metallic properties depending on crystal orientation. The band gap varies approximately as ...
Atomic scale properties of epitaxial graphene grown on sic(0001)
(Georgia Institute of Technology, 2008-11-17)
Graphene, a honeycomb lattice of sp2-bonded carbon atoms, has received considerable attention in the scientific community due to its unique electronic properties. Distinct symmetries of the graphene wave functions lead ...
Epitaxial graphene films on SiC: growth, characterization, and devices
(Georgia Institute of Technology, 2008-05-13)
Graphene is a single sheet of graphite. While bulk graphite is semimetal, graphene is a zero bandgap semiconductor. Band structure calculations show graphene has a linear energy dispersion relation in the low energy region ...