Hybrid material and device platforms for the next-generation integrated nanophotonics

Abstract

Owing to its mature integration technology in the microelectronics industry, silicon (Si) has been extensively used in the past two decades to demonstrate various photonic applications, especially in the optical signal processing, sensing, and light-matter interaction areas. However, Si hits a limit in several key features to address the ever-increasing demands of photonic integrated circuits. The objective of this Ph.D. research is to investigate and develop new heterogeneous material and device platforms beyond single-layer silicon (Si) to enable novel functionalities not otherwise feasible in Si-based integrated nanophotonic devices and systems. In particular, CMOS-compatible integration of ultra-low-loss silicon nitride (SiN) into Si platform has been pursued to reduce linear optical loss, enable high-quality microresonators, improve optical power handling, support various nonlinear phenomena, and thus enable the next-generation of integrated electro-optical nanophotonic devices on a heterogeneously integrated Si chip.