A study on design methodologies of power amplifiers using SiGe BiCMOS technologies
MetadataShow full item record
The goal of the proposed research is to develop multiple design methodologies of power amplifiers (PAs) using silicon germanium (SiGe) heterojunction bipolar junction transistor (HBT) to achieve highly efficient, high power, highly linear, and/or broadband amplification. Choosing optimal design method depending upon applications will be critical to overcome performance limitations imposed by the inherent low bandgap of SiGe HBT. This work provides several design examples of SiGe HBT PAs and explains design approaches suitable for each application not only by focusing on unique features of SiGe HBTs including their large signal operation and electrical-thermal effect, but also by devising novel passive and active circuit design techniques.