Video-bandwidth enhancement of RF power transistors through Volterra analysis

Abstract

The objective of the proposed research is to identify the causes of signal bandwidth limitations of RF Power Transistors and develop a methodology to improve this capability beyond that which can be achieved using PCB tuning techniques. An RF power transistor will be developed that can amplify a wide-band signal in Class AB and Doherty Architectures and correct well in Digital Pre-Distortion Systems. This goals of this research support industry requirements of full-band solutions for cellular base station High Power Amplifiers.