Video-bandwidth enhancement of RF power transistors through Volterra analysis
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The objective of the proposed research is to identify the causes of signal bandwidth limitations of RF Power Transistors and develop a methodology to improve this capability beyond that which can be achieved using PCB tuning techniques. An RF power transistor will be developed that can amplify a wide-band signal in Class AB and Doherty Architectures and correct well in Digital Pre-Distortion Systems. This goals of this research support industry requirements of full-band solutions for cellular base station High Power Amplifiers.