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dc.contributor.advisorCressler, John D.
dc.contributor.authorYing, Hanbin
dc.date.accessioned2021-06-10T13:57:35Z
dc.date.available2021-06-10T13:57:35Z
dc.date.created2021-05
dc.date.issued2021-02-15
dc.date.submittedMay 2021
dc.identifier.urihttp://hdl.handle.net/1853/64641
dc.description.abstractThe objective of this research is to investigate the feasibility of using BiCMOS technology for these quantum science applications and clear some major roadblocks. The requirement for these applications is detailed, and the research is conducted in a systematic way targeting four important aspects of SiGe HBTs, namely, cryogenic characterizations, device physics, compact modeling, and circuit designs.
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherGeorgia Institute of Technology
dc.subjectSiGe HBT
dc.subjectCryogenic
dc.subjectQuantum science
dc.titleUsing SiGe HBTs for quantum science at deep cryogenic temperatures
dc.typeDissertation
dc.description.degreePh.D.
dc.contributor.departmentElectrical and Computer Engineering
thesis.degree.levelDoctoral
dc.contributor.committeeMemberKhan, Asif Islam
dc.contributor.committeeMemberDavidovic, Dragomir
dc.contributor.committeeMemberMourigal, Martin
dc.contributor.committeeMemberLourenco, Nelson E.
dc.date.updated2021-06-10T13:57:35Z


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