The Edge States of Epitaxial Graphene on SiC
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Exceptional ballistic transport was observed in sidewall epitaxial graphene nanoribbons on SiC (SWGNRs) at room temperature. These objects are of fundamental interest as they provide a direct access to charge neutral graphene with excellent transport properties. In this thesis, beyond sidewalls, we fabricate epitaxial graphene devices on different crystal faces on SiC, including the Si-face and non-polar facets. We introduce novel fabrication process flows that have high temperature annealing and Al2O3 as a protective layer to reduce the edge roughness of ribbons and the contamination from resist residue. Then we discuss transport measurement results of graphene nanoribbons on Si-face as well as on non-polar SiC facets, which might reveal a ballistic edge state channel 0+ with mean free path on the order of 30um and another edge state channel activated by temperature. These special epitaxial graphene edge states are interesting from a fundamental physics standpoint and may find applications in future graphene electronic devices.