A FEASIBILITY STUDY OF HIGH-VOLTAGE COMPARATORS USING SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
MetadataShow full item record
The overall trend of transistor scaling has resulted in distinct, application-specific manufacturing processes. Two of these specialized devices scaled complementary metal-oxide-semiconductor field-effect transistors (CMOS) and power transistors, typically have inversely related performance in speed, power handling, and size. This work develops a novel comparator circuit to explore the potential benefits of integrating these two technology schemes to achieve improved power handling capabilities for signal processing and communication systems through the development of a Silicon-based high-voltage comparator. The study produced a final circuit with a flat-band gain of 20dB across the high frequency (HF) range with a projected input voltage tolerance above 10V. The development process indicates that the physical characteristics of the power transistor, a laterally-diffused MOSFET (LDMOS), constrains frequency response and therefore, ultimately, comparator performance. Although the demonstrated device does not achieve the target performance, the investigation suggests that integrating the power transistors at the integrated circuit (IC) level is a promising approach to producing a competitive high-voltage Silicon-based comparator.