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dc.contributor.authorSrirattana, Nuttapongen_US
dc.date.accessioned2005-07-28T17:58:45Z
dc.date.available2005-07-28T17:58:45Z
dc.date.issued2005-04-14en_US
dc.identifier.urihttp://hdl.handle.net/1853/6899
dc.description.abstractNext generation mobile communication systems require the use of linear RF power amplifier for higher data transmission rates. However, linear RF power amplifiers are inherently inefficient and usually require additional circuits or further system adjustments for better efficiency. This dissertation focuses on the development of new efficiency enhancement schemes for linear RF power amplifiers. The multistage Doherty amplifier technique is proposed to improve the performance of linear RF power amplifiers operated in a low power level. This technique advances the original Doherty amplifier scheme by improving the efficiency at much lower power level. The proposed technique is supported by a new approach in device periphery calculation to reduce AM/AM distortion and a further improvement of linearity by the bias adaptation concept. The device periphery adjustment technique for efficiency enhancement of power amplifier integrated circuits is also proposed in this work. The concept is clearly explained together with its implementation on CMOS and SiGe RF power amplifier designs. Furthermore, linearity improvement technique using the cancellation of nonlinear terms is proposed for the CMOS power amplifier in combination with the efficiency enhancement technique. In addition to the efficiency enhancement of power amplifiers, a scalable large-signal MOSFET model using the modified BSIM3v3 approach is proposed. A new scalable substrate network model is developed to enhance the accuracy of the BSIM3v3 model in RF and microwave applications. The proposed model simplifies the modeling of substrate coupling effects in MOS transistor and provides great accuracy in both small-signal and large-signal performances.en_US
dc.format.extent1865179 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectCMOSen_US
dc.subjectDoherty amplifiers
dc.subjectCode division multiple access
dc.subjectEfficiency enhancement
dc.subjectMOSFET
dc.subjectTransistor modeling
dc.subjectSubstrate coupling
dc.subjectScalable models
dc.subjectSiGe HBTs
dc.subjectMobile communications
dc.subjectIntegrated circuits
dc.subjectGaAs MESFETs
dc.subject.lcshPower amplifiers Design and constructionen_US
dc.subject.lcshMobile communication systemsen_US
dc.subject.lcshMetal oxide semiconductors, Complementaryen_US
dc.subject.lcshAmplifiers, Radio frequency Design and constructionen_US
dc.titleHigh-Efficiency Linear RF Power Amplifiers Developmenten_US
dc.typeDissertationen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.advisorCommittee Chair: Phillip E. Allen; Committee Co-Chair: Joy Laskar; Committee Member: John D. Cressler; Committee Member: John Papapolymerou; Committee Member: Paul A. Kohl; Committee Member: Ye Lien_US


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